1.教育與研究經曆
教育經曆
2006.9-2011.12，太阳成集团tyc234cc，機械制造及其自動化專業，工學博士
1992.9-1995.3，武漢理工大學，機械學專業，工學碩士
1988.9-1992.6，天津科技大學，化工設備與機械專業，工學學士
工作經曆
1995-今 太阳成集团tyc234cc，太阳成集团tyc234cc，教師
2.研究方向
博士生導師。長期從事半導體晶圓超精密加工、金屬薄闆精密剪切等相關領域的研究，目前主要研究方向包括半導體晶圓研磨抛光加工方法與技術、固相反應研磨盤和抛光盤研制、CMP抛光工藝和抛光墊研究等。近年來畢業碩士生絕大多數進入半導體行業工作。
作為項目負責人主持國家自然科學基金面上項目3項，省市級、企業研究項目10多項。第一作者或通訊作者在國内外學術刊物和會議上發表學術論文90多篇，其中SCI收錄論文40多篇，EI收錄論文50多篇。授權美國專利1件、PCT專利1件、國家發明專利20多件。
3.職務、兼職和榮譽稱号
學術兼職
中國機械工程學會生産工程分會委員；
中國機械工程學會生産工程分會光整加工專業委員會委員；
中國機械工業金屬切削刀具技術協會切削先進技術研究分會理事。
主要獲獎情況
2021.1.15,《高端金屬闆帶精密高效剪切加工關鍵技術及裝備》獲2020年度廣東省科學技術獎技術發明獎二等獎，評獎單位：廣東省科學技術廳，排名: 4/10(校内排第2)
2020.8, 《光電晶片集群磁流變超光滑平坦化加工技術》獲2020年粵港澳大灣區高價值專利培育布局大賽最具投資潛力獎，排名: 5/6
2013.8，論文《電磁流變效應微磨頭抛光加工電磁協同作用機理》獲2011-2012年度優秀論文一等獎，評獎單位：廣東省機械工程學會，排名: 1/3
2011.11, 舉辦的“2010年中國（國際）光整加工技術學術會議”獲 “2006-2011年中國機械工程學會工作成果獎”, 評獎單位：中國機械工程學會, 排名: 2/3
4.主持或參與的主要項目
主持項目：
(1) 國家自然科學基金面上項目：單晶SiC磁流變彈性抛光墊磁控柔性去除-芬頓反應協同抛光機理與關鍵技術(52475434), 2025.01-2028.12, 48萬元, 主持
(2) 國家自然科學基金面上項目：單晶金剛石激光誘導石墨化輔助CMP抛光協同作用機制與關鍵技術(52175385), 2022.01-2025.12, 58萬元, 主持
(3) 廣東省自然科學基金面上項目: 單晶SiC磁流變彈性抛光墊制備及磁控-異相芬頓反應抛光機理研究(2023A1515010923), 2023.01-2025.12, 10萬元，主持
(4) 廣東省自然科學基金面上項目: 單晶金剛石紫外光催化-芬頓反應CMP抛光協同作用機制與關鍵技術(2022A1515011868), 2022.01-2024.12, 10萬元，主持
(5) 國家自然科學基金面上項目： SiC晶片原子級超光滑表面磁流變化學複合抛光加工研究(51375097), 2014.01-2017.12, 80萬元, 主持，已結題
(6) 廣東省科技計劃項目粵港重大專項：電工矽鋼闆材精密剪切加工技術研究及裝備研發(2016A050503043), 2016.01-2018.12, 100萬元, 主持，已結題
(7) 廣州市産學研協同創新重大專項: 高效節能汽車發動機自動壓裝與智能檢測一體化關鍵技術及産業化(201508010056), 2015.01-2017.12, 200萬元, 主持，已結題
(8) 廣東省科技計劃項目: 高效節能電磁感應罐身焊縫補塗烘幹機組關鍵技術研發及産業化(2013B090600039), 2015.01-2016.12, 80萬元, 主持，已結題
主要參與項目：
(1) 國家自然科學基金-廣東聯合基金項目: 多場耦合控制磨料狀态的新一代光電晶片超光滑平坦化加工理論與關鍵技術研究(U1801259), 2019.01-2022.12, 255萬元, 參加，已結題
(2) 國家自然科學基金-廣東聯合基金項目: 單晶SiC 基片高效超精密磨粒加工技術基礎研究(U1034006), 2011.01-2014.12, 190萬元, 參加，已結題
5. 主要論文、著作
[1] Jialong Lin, Da Hu, Xinhan Wang, Jiabin Lu*, Qiusheng Yan. The influence of Fenton reaction chemical parameters on the removal of single crystal diamond. Diamond and Related Materials, 2025, 153: 112040
[2] Jialong Lin, Da Hu, Jiabin Lu*, Qiusheng Yan. Chemical mechanical polishing on GaN using a developed resin-metal plate through the aluminum contact corrosion. Materials Today Communications, 2025, 42: 111533
[3] Chen Lin, Jilong Xie, Jiabin Lu*, QiushengYan. Study on the effect of process parameters and removal behavior of single-crystal SiC polishing based on a photocatalytic fixed polishing plate. Diamond and Related Materials, 2025, 153: 111985
[4] Ziyuan Luo, Jiabin Lu*, Qiusheng Yan, Weiming Cai, Weilin Huang. Experimental study of chemical mechanical polishing of polycrystalline diamond based on photo-Fenton reaction. Materials Science in Semiconductor Processing, 2025, 186: 109072
[5] Da Hu, Jiabin Lu*, Yuhang Jin, Huilong Li, Qiusheng Yan. Preparation of CIP@Fe3O4 particles and their impact on the Fenton reaction processing performance of single-crystal SiC. Wear, 2024, 558–559: 205590
[6] Qiang Xiong, Jiabin Lu*, Qiusheng Yan, Wentao Liu, Xinhan Wang, Fenglin Zhang. Tribological behavior of single-crystal diamond in a UV photocatalytic-Fenton composite reaction environment. Wear, 2024, 536-537: 205175
[7] Jiayun Deng, Qiang Xiong, Xiaowei Nie, Qiusheng Yan, Jiyang Cao, Jiabin Lu*. Optimisation of free-abrasive assisted lapping process with vitrified bonded diamond plates for sapphire substrates. Precision Engineering, 2024, 86: 183-194
[8] Huilong Li, Jiabin Lu*, Weiming Cai, Da Hu, Qiusheng Yan. Optimisation of chemical mechanical polishing process parameters for polycrystalline diamond based on photo-Fenton reaction. Diamond & Related Materials, 2024, 150: 111750
[9] Wentao Liu, Jiabin Lu*, Qiang Xiong, Xinhan Wang, Qiusheng Yan. Investigation on influence of polishing disc materials in UV-catalytic polishing of single crystal diamond. Diamond & Related Materials, 2024, 141: 110678
[10] Da Hu, Haotian Long, Jiabin Lu*, Wenrui Liang, Huilong Li, Qiusheng Yan. Preparation and performance study of microporous magnetorheological elastomer polishing pad. Materials Today Communications, 2024, 41: 110980
[11] Da Hu, Haotian Long, Jiabin Lu*, Huilong Li, Jun Zeng, Qiusheng Yan. Preparation and performance study of silicon modified polyurethane-based magnetorheological elastomeric polishing pad. Smart Materials and Structures, 2024,33: 105005
[12] Da Hu, Jiabin Lu*, Qiusheng Yan, Huilong Li, Jiyang Cao. Study of catalytic properties and grinding performance of single-crystal SiC heterogeneous Fenton reaction grinding discs. International Journal of Advanced Manufacturing Technology, 2024, 133: 2551–2563
[13] Ziyuan Luo, Jiabin Lu*, Jun Zeng, Xinhan Wang, Qiusheng Yan. Experimental study on single crystal diamond CMP based on Fenton reaction and analysis of oxidation mechanism. Materials Science in Semiconductor Processing, 2024, 182: 108739
[14] Ziyuan Luo, Jiabin Lu*, Da Hu, Qiusheng Yan. Influence of SiO2-ZnO mixed soft abrasive on tribological behavior and polishing performance of sapphire wafer. Materials Science in Semiconductor Processing, 2024, 176: 108318
[15] Da Hu, Jiabin Lu*, Qiusheng Yan, Yingrong Luo, Ziyuan Luo. Investigating surface wear characteristics of single-crystal SiC based on metal electrochemical corrosion. Materials Science in Semiconductor Processing, 2024, 171: 108004
[16] 胡達, 路家斌*, 閻秋生, 駱應榮, 雒梓源. 基于金屬電化學腐蝕的單晶SiC表面腐蝕和磨損性能研究. 湖南大學學報(自然科學版), 2024, 51(04): 123-131
[17] Da Hu, Jiabin Lu*, Jiayun Deng, Qiusheng Yan, Haotian Long, Yingrong Luo. The polishing properties of magnetorheological-elastomer polishing pad based on the heterogeneous Fenton reaction of single-crystal SiC. Precision Engineering, 2023, 79: 78-85
[18] Weiming Cai, Jiabin Lu*, Qiang Xiong, Ziyuan Luo, Qiusheng Yan. Tribological behavior of polycrystalline diamond based on photo-Fenton reaction. Diamond & Related Materials, 2023, 140: 110430.
[19] Da Hu, Huilong Li, Jiabin Lu*, Qiusheng Yan, Qiang Xiong, Zhanliang Huang, Fenglin Zhang. Study on heterogeneous Fenton reaction parameters for polishing single-crystal SiC using magnetorheological elastomers polishing pads. Smart Materials and Structures, 2023, 32: 025003
[20] Qiang Xiong, Ziyuan Luo, Qiusheng Yan*, Jiabin Lu**, Jisheng Pan. Influences of process parameters on chemical mechanical polishing effect of ZnGeP2 crystal. Materials Science in Semiconductor Processing, 2023, 162: 107499.
[21] Wentao Liu, Qiang Xiong, Jiabin Lu*, Xinhan Wang, Qiusheng Yan. Tribological behavior of single crystal diamond based on UV photocatalytic reaction. Tribology International, 2022, 175: 107806
[22] Xinhan Wang, Qiang Xiong, Jiabin Lu*, Qiusheng Yan, Wentao Liu. Characterization of Fenton reaction-based material removal on single crystal diamond surface. Diamond & Related Materials, 2022, 129: 109320
[23] Da Hu, Jiayun Deng, Jiabin Lu*, Qiusheng Yan, Canlin Du, Jiyang Cao. A study of the magneto-controlled mechanical properties and polishing performance for single-crystal SiC used as a magnetorheological-elastomer polishing pad. Smart Materials and Structures, 2022, 31: 035021
[24] Jiayun Deng, Jiabin Lu*, Shuai Zeng, Qiang Xiong, Qiusheng Yan*, Jisheng Pan. Preparation and processing properties of magnetically controlled abrasive solidification orientation—solid-phase Fenton reaction lapping-polishing plate for single-crystal 4H-SiC. Surfaces and Interfaces, 2022, 29:101646
[25] Qiang Xiong, Xiaowei Nie, Jiabin Lu*, Qiusheng Yan*, Jiayun Deng. Processing performance of vitrified bonded fixed-abrasive lapping plates for sapphire wafers. International Journal of Advanced Manufacturing Technology, 2022, 123: 1945-1955
[26] Yingrong Luo, Qiang Xiong, Jiabin Lu*, Qiusheng Yan, Da Hu. Chemical mechanical polishing exploiting metal electrochemical corrosion of single-crystal SiC. Materials Science in Semiconductor Processing, 2022, 152: 107067
[27] Jiabin Lu*,Yuanfu Huang, Youzhi Fu, Qiusheng Yan, Shuai Zeng. Synergistic effect of photocatalysis and Fenton on improving the removal rate of 4H-SiC during CMP. ECS Journal of Solid State Science and Technology, 2021, 10: 044001
[28] Jiayun Deng, Jiabin Lu*, Qiusheng Yan*, Jisheng Pan. Basic research on chemical mechanical polishing of single-crystal SiC-Electro-Fenton: Reaction mechanism and modelling of hydroxyl radical generation using condition response modelling. Journal of Environmental Chemical Engineering, 2021, 9: 104954.
[29] Jiayun Deng, Jiabin Lu*, Qiusheng Yan*, Jisheng Pan. Enhancement mechanism of chemical mechanical polishing for single-crystal 6H-SiC based on Electro-Fenton reaction. Diamond & Related Materials, 2021, 111:108147
[30] Jiayun Deng, Jiabin Lu*, Shuai Zeng, Qiusheng Yan*, Jisheng Pan. Processing properties for the Si-face of the 4H-SiC substrates using the magnetically-controlled abrasive solidification orientation–solid-phase Fenton reaction for the fabrication of the lapping–polishing plate. Diamond & Related Materials, 2021,120:108652
[31] Jiayun Deng, Jiabin Lu, Qiusheng Yan*, Qixiang Zhang, Jisheng Pan. Preparation and polishing properties of water-based magnetorheological chemical finishing fluid with high catalytic activity for single-crystal SiC. Journal of Intelligent Material Systems and Structures, 2021,32:1441-1451
[32] Jiayun Deng, Qixiang Zhang, Jiabin Lu*, Qiusheng Yan*, Jisheng Pan, Run Chen. Prediction of the surface roughness and material removal rate in chemical mechanical polishing of single-crystal SiC via a back-propagation neural network. Precision Engineering, 2021, 72: 102–110
[33] Qiang Xiong, Jiabin Lu*, Qiusheng Yan*, Jisheng Pan. Edge burr development when using a cemented carbide micro-drill: Formation and control mechanisms. Precision Engineering, 2021, 72: 192–204
[34] Qixiang Zhang, Jisheng Pan*, Xiaowei Zhang, Jiabin Lu, Qiusheng Yan. Tribological behavior of 6H-SiC wafers in different chemical mechanical polishing slurries. Wear, 2021, 472-473.
[35] Jiayun Deng, Qiusheng Yan*, Jiabin Lu*, Qiang Xiong, Jisheng Pan. Optimisation of lapping process parameters for single-crystal 4H-SiC using orthogonal experiments and grey relational analysis. Micromachines, 2021, 12: 910
[36] Qiang Xiong, Qiusheng Yan*, Jiabin Lu, Jisheng Pan. The effects of grinding process parameters of a cemented carbide micro-drill on cutting edge burr formation. The International Journal of Advanced Manufacturing Technology, 2021, 117: 3041-3051
[37] Jun Zeng, Jiabin Lu*, Zhihao Gao, Qiusheng Yan. Formation mechanism for edge of disc cutter made of WC/Co cemented carbide. International Journal of Abrasive Technology, 2020, 10: 44-61
[38] Canming Wang*, Qiusheng Yan, Jiabin Lu, Xiaowei Zhang. Influence of guillotine clearance on cut-edge damage to nonoriented electrical steel. Journal of Materials Engineering and Performance, 2020,29:573-581
[39] Qiusheng Yan, Xin Wang, Qiang Xiong, Jiabin Lu*, Botao Liao. The influences of technological parameters on the ultraviolet photocatalytic reaction rate and photocatalysis- assisted polishing effect for SiC. Journal of Crystal Growth, 2020, 531: 125379
[40] Yiwei Zhu, Qiusheng Yan*, Jiabin Lu. Deformation characteristics and grain size effect of thin silicon steel sheet during shearing. Machining Science and Technology, 2020, 24: 544-568
[41] Yiwei Zhu, Qiusheng Yan*, Jiabin Lu. Fault diagnosis method for disc slitting machine based on wavelet packet transform and support vector machine. International Journal of Computer Integrated Manufacturing, 2020, 33: 1118-1128
[42] Huazhuo Liang, Qiusheng Yan, Jiabin Lu*, Bin Luo, Xiaolan Xiao. Material removal mechanisms in chemical-magnetorheological compound finishing. International Journal of Advanced Manufacturing Technology, 2019, 103: 1337–1348
[43] Huazhuo Liang, Jiabin Lu*, Jisheng Pan*, Qiusheng Yan. Material removal process of single-crystal SiC in chemical-magnetorheological compound finishing. International Journal of Advanced Manufacturing Technology, 2018, 94: 2939-2948
[44] Huazhuo Liang, Jiabin Lu*, Qiusheng Yan. Catalysts based on Fenton reaction for SiC wafer in chemical magnetorheological finishing. AIMS Materials Science, 2018,5: 1112– 1123.
[45] Huazhuo Liang, Jiabin Lu*, Qiusheng Yan, Tao Song. Chemical catalysts of Fenton reaction for single-crystal SiC based on nanoindentation. International Journal of Abrasive Technology, 2018,8: 232-244
[46] Jiabin Lu*, Run Chen, Huazhuo Liang, Qiusheng Yan. The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction. Precision Engineering, 2018,52: 221-226
[47] Qiusheng Yan, Zhihui Kuang, Jiabin Lu*. Effect of AlTiN-coating oblique guillotine tools on their performance when shearing electrical steel sheets. International Journal of Advanced Manufacturing Technology, 2018,99: 819-831
[48] Jiabin Lu*, Qiusheng Yan, Hong Tian, Lingye Kong. Polishing properties of tiny grinding wheel based on Fe3O4 electrorheological fluid. Journal of Materials Processing Technology, 2009, 209: 4954-4957
[49] Jiabin Lu*, Qiusheng Yan, Juan Yu, Weiqiang Gao. Parametric study of micro machining with instantaneous tiny-grinding wheel based on the magnetorheological effect of abrasive slurry. International Journal of Materials and Product Technology, 2008, 31: 113-124
[50] 閻秋生*, 廖博濤, 路家斌, 付有志. 集群磁流變變間隙動壓平坦化加工試驗研究. 機械工程學報, 2021,57:230-238
[51] 路家斌*，曾帥，閻秋生，熊強，鄧家雲. 基于磁控磨料定向的SiC固相芬頓反應研抛盤制備及性能研究. 表面技術, 2021,50: 353-362
[52] 付有志, 路家斌*, 閻秋生, 謝殿華. 磁流變動壓複合抛光基本原理及力學特性. 表面技術, 2020,49: 55-63
[53] 路家斌，熊強，閻秋生*，王鑫，廖博濤. 紫外光催化輔助SiC抛光過程中化學反應速率的影響. 表面技術, 2019,48: 148-158.
[54] 徐少平, 路家斌*, 閻秋生, 宋濤, 潘繼生. 單晶SiC化學機械抛光液的固相催化劑研究. 機械工程學報, 2017, 53: 167-173
[55] 路家斌*, 曾軍, 閻秋生. 圓盤剪分切斷面形貌形成機理研究. 機械工程學報, 2014, 50: 178-185
[56] 潘繼生, 閻秋生, 路家斌, 徐西鵬, 陳森凱. 集群磁流變平面抛光加工技術. 機械工程學報, 2014, 50: 205-212
[57] 路家斌*, 潘嘉強, 閻秋生. 不鏽鋼薄闆圓盤剪分切過程有限元仿真研究. 機械工程學報, 2013, 49: 190-198
[58] 路家斌*, 閻秋生, 潘繼生, 高偉強. 電磁流變效應微磨頭加工電磁耦合協同作用機理實驗. 光學 精密工程, 2012, 20: 2485-2491
[59] 路家斌*, 閻秋生, 田虹, 高偉強.. 電磁流變效應微磨頭抛光加工電磁協同作用機理. 摩擦學學報, 2010, 30: 190-196
6. 主要授權發明專利
[1] Jiabin Lu, Da Hu, Haotian Long, Yuhang Jin, Qiang Xiong. Magnetorheological-elastomer polishing pad for chemical mechanical polishing of semiconductor wafer, preparation method and application thereof, 美國專利, US 12,083,647B1, 授權時間: 2024.09.10
[2] 熊強, 路家斌, 閻秋生, 駱應榮, 胡達. 一種半導體晶片磁控研磨和抛光一體盤及其使用方法, PCT專利, PCT/CN2022/142290, 授權時間: 2023.03.15
[3] 路家斌, 梁文銳, 胡達, 靳宇航, 龍浩天. 一種可改變磨料運動狀态的核殼磨料研抛盤、制備方法及其應用, 發明, ZL202410526205.7, 授權時間: 2025.01.21
[4] 路家斌, 雒梓源, 熊強, 閻秋生, 夏江南, 陳緣靓. 一種固相反應的液體彈珠式半導體晶片研磨塊及其制備方法和應用, 發明, ZL202211084919.4, 授權時間: 2024.12.01
[5] 路家斌, 曾帥, 閻秋生, 潘繼生, 聶小威, 陳海陽. 一種用于SiC晶片研磨的固相反應研磨盤及其制備方法和應用, 發明, ZL202110876310.X, 授權時間: 2024.11.22
[6] 路家斌, 胡達, 胡增權, 梁文銳, 黃梓榮, 龍浩天. 一種用于SiC晶片化學機械抛光的磁流變彈性金屬接觸腐蝕抛光墊、制備方法及其應用, 發明, ZL202311873185.2, 授權時間: 2024.07.12
[7] 路家斌, 胡達, 龍浩天, 靳宇航, 熊強. 一種用于半導體晶片化學機械抛光的磁流變彈性抛光墊、制備方法及其應用, 發明, ZL202310946782.7, 授權時間: 2024.01.26
[8] 熊強, 路家斌, 閻秋生, 駱應榮, 胡達. 一種半導體晶片磁控研磨和抛光一體盤及其使用方法, 發明, ZL202210769741.0, 授權時間: 2023.04.28
[9] 路家斌, 駱應榮, 熊強, 閻秋生, 王新漢, 劉文濤. 一種抛光液、磷化铟抛光裝置及方法, 發明, ZL202210199935.1, 授權時間: 2023.04.11
[10] 路家斌, 胡達, 熊強, 閻秋生, 杜燦林. 一種磁流變彈性體及其制備方法和應用, 發明, ZL202111058349.7 , 授權時間: 2023.07.07
[11] 路家斌, 王新漢, 熊強, 閻秋生, 劉文濤, 駱應榮. 一種金剛石晶片抛光的材料去除率計算方法及系統, 發明, ZL202110930698.7, 授權時間: 2023.02.27
[12] 路家斌, 曾帥, 閻秋生, 潘繼生, 聶小威, 陳海陽. 一種适用于SiC晶片的磨粒定向的固相反應研磨盤及其制備方法和應用, 發明, ZL202110286580.5, 授權時間: 2022.12.23
[13] 閻秋生, 郭曉輝, 路家斌, 潘繼生. 往複移動滾剪的非晶合金帶材橫剪加工裝置和方法, 發明, ZL202011364883.6, 授權時間: 2022.06.14
[14] 閻秋生, 湯彪, 路家斌, 朱奕玮. 一種通過橡膠圈擠壓供油的微溝槽組合圓盤刀, 發明, ZL201811230961.6, 授權時間: 2021.02.09
[15] 閻秋生, 朱奕玮, 路家斌, 湯彪. 一種具有潤滑油導流微溝槽的橫剪刀, 發明, ZL201811230028.9, 授權時間: 2021.01.05
[16] 路家斌, 梁華卓, 湯彪. 一種凸輪驅動磁體式磁流變流體動壓抛光裝置及抛光方法, 發明, ZL201710094137.1, 授權時間: 2019.06.14
[17] 肖曉蘭, 閻秋生, 潘繼生, 路家斌, 陳潤, 梁華卓. 一種用于SiC單晶片的磁流變化學機械抛光液及其使用方法, 發明, ZL201610630974.7, 授權時間: 2018.05.15
[18] 路家斌, 梁華卓, 閻秋生, 陳潤. 一種半導體基片的流體動壓抛光裝置及其抛光方法, 發明, ZL201610351953.1, 授權時間: 2018.05.01
[19] 路家斌, 陳潤, 閻秋生, 梁華卓, 朱奕玮. 一種自增壓高速磨粒磁流孔内表面抛光方法及裝置, 發明, ZL201610219339.X, 授權時間: 2018.04.17
[20] 路家斌, 梁華卓, 閻秋生, 陳潤. 一種磁流變流體動壓複合抛光裝置及其抛光方法, 發明, ZL201610352311.3, 授權時間: 2018.04.17
[21] 閻秋生, 曾軍, 馮文雅, 路家斌, 潘繼生. 金屬闆材圓盤剪分切加工三向力測量裝置及其方法, 發明, ZL201410425021.8, 授權時間: 2017.03.01
[22] 潘繼生, 閻秋生, 路家斌. 柔性抛光墊在線修整的超光滑平面研磨抛光裝置及方法, 發明, ZL201410424335.6, 授權時間: 2017.01.11
[23] 路家斌, 潘繼生, 祝江停, 閻秋生, 徐西鵬. 一種單晶碳化矽晶片的化學集群磁流變複合加工方法, 發明, ZL201210304530.6, 授權時間: 2016.09.21
[24] 潘繼生, 陳森凱, 路家斌, 閻秋生. 一種單晶半導體基片的截面快速制作及亞表面微裂紋檢測方法, 發明, ZL201310643511.0, 授權時間: 2016.01.20
[25] 潘繼生, 閻秋生, 路家斌, 王威. 磁流變效應粘彈性夾持的電瓷基片柔性研抛裝置及方法, 發明, ZL201210553510.2, 授權時間: 2015.12.23
7. 指導研究生獲獎或資助情況
(1) 李晖龍: 2024省科技創新戰略專項資金（大學生科技創新培育）項目（PDJH2024B145）, 金額：1.5萬
(2) 雒梓源: 2023省攀登計劃重點項目(PDJH2023A0157), 金額：6.0萬
(3) 指導的博士生獲國家獎學金：鄧家雲(協助指導，2021)、熊強(2023)、胡達(2024)
(4) 指導的博士生雒梓源入選2025年研究生“拔尖計劃”
(5) 指導的碩士生李晖龍入選2025年研究生“卓越計劃”
8. 聯系方式
辦公地點：太阳成集团tyc234cc工學二号館709
Tel: 13808824867
E-mail: lujiabin@gdut.edu.cn, 13808824867@139.com
招生名額：每年招收學術博士生1名，工程博士生1名，碩士生（學碩+專碩）5名。
對研究生的要求：主動、勤奮、勤于思索、動手能力強，有志于進入半導體行業的同學。
近幾年畢業學生入職單位：華為海思，深圳新凱來，深圳鵬芯微，深圳鵬新旭，武漢長江存儲，東莞中稼半導體，廣州中航光電，深圳比亞迪半導體，武漢新芯，深圳深南電路……
